TY - JOUR
AU - Zervos, M.
AU - Othonos, A.
AU - Tsokkou, D.
AU - Kioseoglou, J.
AU - Pavlidou, E.
AU - Komninou, P.
PY - 2013//
TI - Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution
JO - physica status solidi (a)
SP - 226
EP - 229
VL - 210
IS - 1
PB - WILEY-VCH Verlag
KW - defects, nanowires, spectroscopy, tin oxide
N2 - Tin oxide (SnO2) nanowires (NWs) with diameters of 50â€‰nm, lengths up to 100â€‰Âµm and a tetragonal rutile crystal structure have been grown by low pressure reactive vapour transport on 1â€‰nm Au/Si(001). The free carrier density of the SnO2 NWs measured by THz absorption spectroscopy was found to be nâ€‰=â€‰(3.3â€‰Â±â€‰0.4)â€‰Ã—â€‰1016â€‰cmâˆ’3. Based on this we have determined the one-dimensional (1D) sub-band energies, overall charge distribution and band bending via the self-consistent solution of the Poissonâ€“Schrödinger equations in cylindrical coordinates and in the effective mass approximation. We find that a high density of 1018â€“1019â€‰cmâˆ’3 donor-like defect related states is required to obtain a line density of 0.7â€‰Ã—â€‰109 close to the measured value by taking the Fermi level to be situated â‰ˆ0.7â€‰eV below the conduction band edge at the surface which gives a surface depletion shell thickness of 15â€‰nm. We discuss the origin of the donor-like states that are energetically located in the upper half of the energy band gap as determined by ultrafast, time-resolved absorptionâ€“transmission spectroscopy.
SN - 1862-6319
UR - http://dx.doi.org/10.1002/pssa.201200403
ID - PSSA:PSSA201200403
ER -